Kınacı, B. Et Al. 2011. The analysis of Au/TiO2/n-Si schottky barrier diode at high temperatures using I-V characteristics. Optoelectronics and Advanced Materials, Rapid Communications , vol.5, no.4 , 434-437.

Kınacı, B., Asar, T., Özen, Y., & Ozcelik, S., (2011). The analysis of Au/TiO2/n-Si schottky barrier diode at high temperatures using I-V characteristics. Optoelectronics and Advanced Materials, Rapid Communications , vol.5, no.4, 434-437.

Kınacı, BARIŞ Et Al. "The analysis of Au/TiO2/n-Si schottky barrier diode at high temperatures using I-V characteristics," Optoelectronics and Advanced Materials, Rapid Communications , vol.5, no.4, 434-437, 2011

Kınacı, BARIŞ Et Al. "The analysis of Au/TiO2/n-Si schottky barrier diode at high temperatures using I-V characteristics." Optoelectronics and Advanced Materials, Rapid Communications , vol.5, no.4, pp.434-437, 2011

Kınacı, B. Et Al. (2011) . "The analysis of Au/TiO2/n-Si schottky barrier diode at high temperatures using I-V characteristics." Optoelectronics and Advanced Materials, Rapid Communications , vol.5, no.4, pp.434-437.

@article{article, author={BARIŞ KINACI Et Al. }, title={The analysis of Au/TiO2/n-Si schottky barrier diode at high temperatures using I-V characteristics}, journal={Optoelectronics and Advanced Materials, Rapid Communications}, year=2011, pages={434-437} }