Kaya, A. Et Al. 2016. The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature. MICROELECTRONIC ENGINEERING , vol.149 , 166-171.

Kaya, A., Maril, E., Altindal, Ş., & Uslu, I., (2016). The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature. MICROELECTRONIC ENGINEERING , vol.149, 166-171.

Kaya, A. Et Al. "The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature," MICROELECTRONIC ENGINEERING , vol.149, 166-171, 2016

Kaya, A. Et Al. "The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature." MICROELECTRONIC ENGINEERING , vol.149, pp.166-171, 2016

Kaya, A. Et Al. (2016) . "The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature." MICROELECTRONIC ENGINEERING , vol.149, pp.166-171.

@article{article, author={A. Kaya Et Al. }, title={The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature}, journal={MICROELECTRONIC ENGINEERING}, year=2016, pages={166-171} }