Yildiz, A. Et Al. 2010. Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 <= x <= 0.135) layers. CURRENT APPLIED PHYSICS , vol.10, no.3 , 838-841.

Yildiz, A., LİŞESİVDİN, S. B., Tasli, P., Ozbay, E., & Kasap, M., (2010). Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 <= x <= 0.135) layers. CURRENT APPLIED PHYSICS , vol.10, no.3, 838-841.

Yildiz, A. Et Al. "Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 <= x <= 0.135) layers," CURRENT APPLIED PHYSICS , vol.10, no.3, 838-841, 2010

Yildiz, A. Et Al. "Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 <= x <= 0.135) layers." CURRENT APPLIED PHYSICS , vol.10, no.3, pp.838-841, 2010

Yildiz, A. Et Al. (2010) . "Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 <= x <= 0.135) layers." CURRENT APPLIED PHYSICS , vol.10, no.3, pp.838-841.

@article{article, author={A. Yildiz Et Al. }, title={Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1-xN (0.06 <= x <= 0.135) layers}, journal={CURRENT APPLIED PHYSICS}, year=2010, pages={838-841} }