Gokden, S. Et Al. 2010. Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.25, no.4 .

Gokden, S., Tulek, R., Teke, A., Leach, J. H., Fan, Q., Xie, J., ... Ozgur, U.(2010). Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.25, no.4.

Gokden, S. Et Al. "Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel," SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.25, no.4, 2010

Gokden, S. Et Al. "Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.25, no.4, 2010

Gokden, S. Et Al. (2010) . "Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.25, no.4.

@article{article, author={S. Gokden Et Al. }, title={Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, year=2010}