H. Yu Et Al. , "Double Heterostructure AlGaN/GaN/AlGaN HEMT Based on Grading AlGaN/AlN Buffer Layer," 2009 MRS Fall Meeting, I: III-Nitride Materials for Sensing, Energy Conversion, and Controlled Light-Matter Interactions, SESSION I4: Surface and Interface Properties II , Boston, United States Of America, pp.4, 2009
Yu, H. Et Al. 2009. Double Heterostructure AlGaN/GaN/AlGaN HEMT Based on Grading AlGaN/AlN Buffer Layer. 2009 MRS Fall Meeting, I: III-Nitride Materials for Sensing, Energy Conversion, and Controlled Light-Matter Interactions, SESSION I4: Surface and Interface Properties II , (Boston, United States Of America), 4.
Yu, H., LİŞESİVDİN, S. B., Bölükbaş, B., Kelekçi, Ö., Öztürk, M., & Çakmak, H., (2009). Double Heterostructure AlGaN/GaN/AlGaN HEMT Based on Grading AlGaN/AlN Buffer Layer . 2009 MRS Fall Meeting, I: III-Nitride Materials for Sensing, Energy Conversion, and Controlled Light-Matter Interactions, SESSION I4: Surface and Interface Properties II (pp.4). Boston, United States Of America
Yu, Hongbo Et Al. "Double Heterostructure AlGaN/GaN/AlGaN HEMT Based on Grading AlGaN/AlN Buffer Layer," 2009 MRS Fall Meeting, I: III-Nitride Materials for Sensing, Energy Conversion, and Controlled Light-Matter Interactions, SESSION I4: Surface and Interface Properties II, Boston, United States Of America, 2009
Yu, Hongbo Et Al. "Double Heterostructure AlGaN/GaN/AlGaN HEMT Based on Grading AlGaN/AlN Buffer Layer." 2009 MRS Fall Meeting, I: III-Nitride Materials for Sensing, Energy Conversion, and Controlled Light-Matter Interactions, SESSION I4: Surface and Interface Properties II , Boston, United States Of America, pp.4, 2009
Yu, H. Et Al. (2009) . "Double Heterostructure AlGaN/GaN/AlGaN HEMT Based on Grading AlGaN/AlN Buffer Layer." 2009 MRS Fall Meeting, I: III-Nitride Materials for Sensing, Energy Conversion, and Controlled Light-Matter Interactions, SESSION I4: Surface and Interface Properties II , Boston, United States Of America, p.4.
@conferencepaper{conferencepaper, author={Hongbo Yu Et Al. }, title={Double Heterostructure AlGaN/GaN/AlGaN HEMT Based on Grading AlGaN/AlN Buffer Layer}, congress name={2009 MRS Fall Meeting, I: III-Nitride Materials for Sensing, Energy Conversion, and Controlled Light-Matter Interactions, SESSION I4: Surface and Interface Properties II}, city={Boston}, country={United States Of America}, year={2009}, pages={4} }