Kelekci, O. Et Al. 2011. Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers. Physica B: Condensed Matter , vol.406, no.8 , 1513-1518.

Kelekci, O., LİŞESİVDİN, S. B., Ozcelik, S., & Ozbay, E., (2011). Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers. Physica B: Condensed Matter , vol.406, no.8, 1513-1518.

Kelekci, O. Et Al. "Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers," Physica B: Condensed Matter , vol.406, no.8, 1513-1518, 2011

Kelekci, O. Et Al. "Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers." Physica B: Condensed Matter , vol.406, no.8, pp.1513-1518, 2011

Kelekci, O. Et Al. (2011) . "Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers." Physica B: Condensed Matter , vol.406, no.8, pp.1513-1518.

@article{article, author={O. Kelekci Et Al. }, title={Numerical optimization of In-mole fractions and layer thicknesses in AlxGa1-xN/AlN/GaN high electron mobility transistors with InGaN back barriers}, journal={Physica B: Condensed Matter}, year=2011, pages={1513-1518} }