Zeyrek, S. Et Al. 2008. The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Al/GaN/p-GaAs (MIS) Schottky Diodes in Wide Temperature Range. BRAZILIAN JOURNAL OF PHYSICS , vol.38, no.4 , 591-597.

Zeyrek, S., Buelbuel, M. M., Altindal, Ş., Baykul, M. C., & Yuezer, H., (2008). The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Al/GaN/p-GaAs (MIS) Schottky Diodes in Wide Temperature Range. BRAZILIAN JOURNAL OF PHYSICS , vol.38, no.4, 591-597.

Zeyrek, S. Et Al. "The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Al/GaN/p-GaAs (MIS) Schottky Diodes in Wide Temperature Range," BRAZILIAN JOURNAL OF PHYSICS , vol.38, no.4, 591-597, 2008

Zeyrek, S. Et Al. "The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Al/GaN/p-GaAs (MIS) Schottky Diodes in Wide Temperature Range." BRAZILIAN JOURNAL OF PHYSICS , vol.38, no.4, pp.591-597, 2008

Zeyrek, S. Et Al. (2008) . "The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Al/GaN/p-GaAs (MIS) Schottky Diodes in Wide Temperature Range." BRAZILIAN JOURNAL OF PHYSICS , vol.38, no.4, pp.591-597.

@article{article, author={S. Zeyrek Et Al. }, title={The Double Gaussian Distribution of Inhomogeneous Barrier Heights in Al/GaN/p-GaAs (MIS) Schottky Diodes in Wide Temperature Range}, journal={BRAZILIAN JOURNAL OF PHYSICS}, year=2008, pages={591-597} }