Arslan, E. Et Al. 2008. Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD. JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.41, no.15 .

Arslan, E., Ozturk, M. K., TEKE, A., ÖZÇELİK, S., & ÖZBAY, E., (2008). Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD. JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.41, no.15.

Arslan, Engin Et Al. "Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD," JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.41, no.15, 2008

Arslan, Engin Et Al. "Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD." JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.41, no.15, 2008

Arslan, E. Et Al. (2008) . "Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD." JOURNAL OF PHYSICS D-APPLIED PHYSICS , vol.41, no.15.

@article{article, author={Engin Arslan Et Al. }, title={Buffer optimization for crack-free GaN epitaxial layers grown on Si(111) substrate by MOCVD}, journal={JOURNAL OF PHYSICS D-APPLIED PHYSICS}, year=2008}