Hatipoglu, İ. Et Al. 2021. Correlation between deep-level defects and functional properties of β-(Sn xGa1- x)2O3on Si photodetectors. Journal of Applied Physics , vol.130, no.20 .

Hatipoglu, İ., Hunter, D. A., Mukhopadhyay, P., Williams, M. S., Edwards, P. R., Martin, R. W., ... Schoenfeld, W. V.(2021). Correlation between deep-level defects and functional properties of β-(Sn xGa1- x)2O3on Si photodetectors. Journal of Applied Physics , vol.130, no.20.

Hatipoglu, İSA Et Al. "Correlation between deep-level defects and functional properties of β-(Sn xGa1- x)2O3on Si photodetectors," Journal of Applied Physics , vol.130, no.20, 2021

Hatipoglu, İSA Et Al. "Correlation between deep-level defects and functional properties of β-(Sn xGa1- x)2O3on Si photodetectors." Journal of Applied Physics , vol.130, no.20, 2021

Hatipoglu, İ. Et Al. (2021) . "Correlation between deep-level defects and functional properties of β-(Sn xGa1- x)2O3on Si photodetectors." Journal of Applied Physics , vol.130, no.20.

@article{article, author={İSA HATİPOĞLU Et Al. }, title={Correlation between deep-level defects and functional properties of β-(Sn xGa1- x)2O3on Si photodetectors}, journal={Journal of Applied Physics}, year=2021}