D. Korucu Et Al. , "The origin of forward bias capacitance peak and voltage dependent behaviour of gold/p-type indium phosphide Schottky barrier diode fabricated by photolithography," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.30, pp.393-399, 2015
Korucu, D. Et Al. 2015. The origin of forward bias capacitance peak and voltage dependent behaviour of gold/p-type indium phosphide Schottky barrier diode fabricated by photolithography. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.30 , 393-399.
Korucu, D., Duman, S., & Turut, A., (2015). The origin of forward bias capacitance peak and voltage dependent behaviour of gold/p-type indium phosphide Schottky barrier diode fabricated by photolithography. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.30, 393-399.
Korucu, D., S. Duman, And A. Turut. "The origin of forward bias capacitance peak and voltage dependent behaviour of gold/p-type indium phosphide Schottky barrier diode fabricated by photolithography," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.30, 393-399, 2015
Korucu, D. Et Al. "The origin of forward bias capacitance peak and voltage dependent behaviour of gold/p-type indium phosphide Schottky barrier diode fabricated by photolithography." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.30, pp.393-399, 2015
Korucu, D. Duman, S. And Turut, A. (2015) . "The origin of forward bias capacitance peak and voltage dependent behaviour of gold/p-type indium phosphide Schottky barrier diode fabricated by photolithography." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.30, pp.393-399.
@article{article, author={D. Korucu Et Al. }, title={The origin of forward bias capacitance peak and voltage dependent behaviour of gold/p-type indium phosphide Schottky barrier diode fabricated by photolithography}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, year=2015, pages={393-399} }