Al Abbas, J. Et Al. 2017. The effect of doping in different layers on 2DEG for ultrathin-barrier AlN/GaN heterostructures. Optoelectronics and Advanced Materials, Rapid Communications , vol.11 , 328-331.

Al Abbas, J., Narin, P., Atmaca, G., Kutlu, E., Sarikavak-Lisesivdin, B., & LİŞESİVDİN, S. B., (2017). The effect of doping in different layers on 2DEG for ultrathin-barrier AlN/GaN heterostructures. Optoelectronics and Advanced Materials, Rapid Communications , vol.11, 328-331.

Al Abbas, J.M. Et Al. "The effect of doping in different layers on 2DEG for ultrathin-barrier AlN/GaN heterostructures," Optoelectronics and Advanced Materials, Rapid Communications , vol.11, 328-331, 2017

Al Abbas, J.M. A. Et Al. "The effect of doping in different layers on 2DEG for ultrathin-barrier AlN/GaN heterostructures." Optoelectronics and Advanced Materials, Rapid Communications , vol.11, pp.328-331, 2017

Al Abbas, J. Et Al. (2017) . "The effect of doping in different layers on 2DEG for ultrathin-barrier AlN/GaN heterostructures." Optoelectronics and Advanced Materials, Rapid Communications , vol.11, pp.328-331.

@article{article, author={J.M. Al Abbas Et Al. }, title={The effect of doping in different layers on 2DEG for ultrathin-barrier AlN/GaN heterostructures}, journal={Optoelectronics and Advanced Materials, Rapid Communications}, year=2017, pages={328-331} }