Arslan, E. Et Al. 2009. The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.94, no.1 , 73-82.

Arslan, E., Ozturk, M. K., Duygulu, O., KAYA, A. A., ÖZÇELİK, S., & ÖZBAY, E., (2009). The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.94, no.1, 73-82.

Arslan, Engin Et Al. "The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate," APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.94, no.1, 73-82, 2009

Arslan, Engin Et Al. "The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate." APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.94, no.1, pp.73-82, 2009

Arslan, E. Et Al. (2009) . "The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate." APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.94, no.1, pp.73-82.

@article{article, author={Engin Arslan Et Al. }, title={The influence of nitridation time on the structural properties of GaN grown on Si (111) substrate}, journal={APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING}, year=2009, pages={73-82} }