A. Gumus And Ş. Altindal, "Current-transport mechanisms in gold/polypyrrole/n-silicon Schottky barrier diodes in the temperature range of 110-360 K," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.28, pp.66-71, 2014
Gumus, A. And Altindal, Ş. 2014. Current-transport mechanisms in gold/polypyrrole/n-silicon Schottky barrier diodes in the temperature range of 110-360 K. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.28 , 66-71.
Gumus, A., & Altindal, Ş., (2014). Current-transport mechanisms in gold/polypyrrole/n-silicon Schottky barrier diodes in the temperature range of 110-360 K. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.28, 66-71.
Gumus, A., And ŞEMSETTİN ALTINDAL. "Current-transport mechanisms in gold/polypyrrole/n-silicon Schottky barrier diodes in the temperature range of 110-360 K," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.28, 66-71, 2014
Gumus, A. And Altindal, ŞEMSETTİN. "Current-transport mechanisms in gold/polypyrrole/n-silicon Schottky barrier diodes in the temperature range of 110-360 K." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.28, pp.66-71, 2014
Gumus, A. And Altindal, Ş. (2014) . "Current-transport mechanisms in gold/polypyrrole/n-silicon Schottky barrier diodes in the temperature range of 110-360 K." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.28, pp.66-71.
@article{article, author={A. Gumus And author={ŞEMSETTİN ALTINDAL}, title={Current-transport mechanisms in gold/polypyrrole/n-silicon Schottky barrier diodes in the temperature range of 110-360 K}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, year=2014, pages={66-71} }