Tasli, P. Et Al. 2010. Numerical simulation of novel ultrathin barrier n-GaN/InAlN/AlN/GaN HEMT structures: Effect of indium-mole fraction, doping and layer thicknesses. PHYSICA B-CONDENSED MATTER , vol.405, no.18 , 4020-4026.

Tasli, P., Sarikavak, B., Atmaca, G., Elibol, K., Kuloglu, A. F., & Lisesivdin, S. B., (2010). Numerical simulation of novel ultrathin barrier n-GaN/InAlN/AlN/GaN HEMT structures: Effect of indium-mole fraction, doping and layer thicknesses. PHYSICA B-CONDENSED MATTER , vol.405, no.18, 4020-4026.

Tasli, P. Et Al. "Numerical simulation of novel ultrathin barrier n-GaN/InAlN/AlN/GaN HEMT structures: Effect of indium-mole fraction, doping and layer thicknesses," PHYSICA B-CONDENSED MATTER , vol.405, no.18, 4020-4026, 2010

Tasli, P. Et Al. "Numerical simulation of novel ultrathin barrier n-GaN/InAlN/AlN/GaN HEMT structures: Effect of indium-mole fraction, doping and layer thicknesses." PHYSICA B-CONDENSED MATTER , vol.405, no.18, pp.4020-4026, 2010

Tasli, P. Et Al. (2010) . "Numerical simulation of novel ultrathin barrier n-GaN/InAlN/AlN/GaN HEMT structures: Effect of indium-mole fraction, doping and layer thicknesses." PHYSICA B-CONDENSED MATTER , vol.405, no.18, pp.4020-4026.

@article{article, author={P. Tasli Et Al. }, title={Numerical simulation of novel ultrathin barrier n-GaN/InAlN/AlN/GaN HEMT structures: Effect of indium-mole fraction, doping and layer thicknesses}, journal={PHYSICA B-CONDENSED MATTER}, year=2010, pages={4020-4026} }