Goekcen, M. Et Al. 2008. Electrical and dielectric properties of Au/SiO2/n-GaAs (MOS) structures with different oxide layer thickness. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.2, no.12 , 833-837.

Goekcen, M., Altuntas, H., & Altindal, S., (2008). Electrical and dielectric properties of Au/SiO2/n-GaAs (MOS) structures with different oxide layer thickness. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.2, no.12, 833-837.

Goekcen, M., H. Altuntas, And S. Altindal. "Electrical and dielectric properties of Au/SiO2/n-GaAs (MOS) structures with different oxide layer thickness," OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.2, no.12, 833-837, 2008

Goekcen, M. Et Al. "Electrical and dielectric properties of Au/SiO2/n-GaAs (MOS) structures with different oxide layer thickness." OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.2, no.12, pp.833-837, 2008

Goekcen, M. Altuntas, H. And Altindal, S. (2008) . "Electrical and dielectric properties of Au/SiO2/n-GaAs (MOS) structures with different oxide layer thickness." OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.2, no.12, pp.833-837.

@article{article, author={M. Goekcen Et Al. }, title={Electrical and dielectric properties of Au/SiO2/n-GaAs (MOS) structures with different oxide layer thickness}, journal={OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS}, year=2008, pages={833-837} }