Zeybek, O. Et Al. 2018. Fractal size, occupied fraction study with annealing of heterostructure based AlxGa1−xN. Journal of Materials Science: Materials in Electronics , vol.29, no.3 , 2040-2044.

Zeybek, O., Ayaz, A., Ozturk, M. K., Davarpanah, A. M., Barrett, S. D., Bayirli, M., ... Ozcelik, S.(2018). Fractal size, occupied fraction study with annealing of heterostructure based AlxGa1−xN. Journal of Materials Science: Materials in Electronics , vol.29, no.3, 2040-2044.

Zeybek, O. Et Al. "Fractal size, occupied fraction study with annealing of heterostructure based AlxGa1−xN," Journal of Materials Science: Materials in Electronics , vol.29, no.3, 2040-2044, 2018

Zeybek, O. Et Al. "Fractal size, occupied fraction study with annealing of heterostructure based AlxGa1−xN." Journal of Materials Science: Materials in Electronics , vol.29, no.3, pp.2040-2044, 2018

Zeybek, O. Et Al. (2018) . "Fractal size, occupied fraction study with annealing of heterostructure based AlxGa1−xN." Journal of Materials Science: Materials in Electronics , vol.29, no.3, pp.2040-2044.

@article{article, author={O. Zeybek Et Al. }, title={Fractal size, occupied fraction study with annealing of heterostructure based AlxGa1−xN}, journal={Journal of Materials Science: Materials in Electronics}, year=2018, pages={2040-2044} }