Sonmez, F. Et Al. 2021. The effect of passivation layer, doping and spacer layer on electron-longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.122 .

Sonmez, F., Ardali, S., Atmaca, G., Lisesivdin, S. B., Malin, T., Mansurov, V., ... Zhuravlev, K.(2021). The effect of passivation layer, doping and spacer layer on electron-longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.122.

Sonmez, F. Et Al. "The effect of passivation layer, doping and spacer layer on electron-longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.122, 2021

Sonmez, F. Et Al. "The effect of passivation layer, doping and spacer layer on electron-longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.122, 2021

Sonmez, F. Et Al. (2021) . "The effect of passivation layer, doping and spacer layer on electron-longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.122.

@article{article, author={F. Sonmez Et Al. }, title={The effect of passivation layer, doping and spacer layer on electron-longitudinal optical phonon momentum relaxation time in Al0.3Ga0.7N/AlN/GaN heterostructures}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, year=2021}