Buyukbas-Ulusan, A. Et Al. 2019. Double-exponential current–voltage (I–V) and negative capacitance (NC) behavior of Al/(CdSe-PVA)/p-Si/Al (MPS) structure. Journal of Materials Science: Materials in Electronics , vol.30, no.10 , 9572-9581.

Buyukbas-Ulusan, A., Tataroglu, A., Azizian-Kalandaragh, Y., & Kosal, M., (2019). Double-exponential current–voltage (I–V) and negative capacitance (NC) behavior of Al/(CdSe-PVA)/p-Si/Al (MPS) structure. Journal of Materials Science: Materials in Electronics , vol.30, no.10, 9572-9581.

Buyukbas-Ulusan, A. Et Al. "Double-exponential current–voltage (I–V) and negative capacitance (NC) behavior of Al/(CdSe-PVA)/p-Si/Al (MPS) structure," Journal of Materials Science: Materials in Electronics , vol.30, no.10, 9572-9581, 2019

Buyukbas-Ulusan, A. Et Al. "Double-exponential current–voltage (I–V) and negative capacitance (NC) behavior of Al/(CdSe-PVA)/p-Si/Al (MPS) structure." Journal of Materials Science: Materials in Electronics , vol.30, no.10, pp.9572-9581, 2019

Buyukbas-Ulusan, A. Et Al. (2019) . "Double-exponential current–voltage (I–V) and negative capacitance (NC) behavior of Al/(CdSe-PVA)/p-Si/Al (MPS) structure." Journal of Materials Science: Materials in Electronics , vol.30, no.10, pp.9572-9581.

@article{article, author={A. Buyukbas-Ulusan Et Al. }, title={Double-exponential current–voltage (I–V) and negative capacitance (NC) behavior of Al/(CdSe-PVA)/p-Si/Al (MPS) structure}, journal={Journal of Materials Science: Materials in Electronics}, year=2019, pages={9572-9581} }