T. Tunç Et Al. , "Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.14, no.2, pp.139-145, 2011
Tunç, T. Et Al. 2011. Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.14, no.2 , 139-145.
Tunç, T., Altındal, Ş., Uslu, İ., Dökme, İ., & Uslu, H., (2011). Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.14, no.2, 139-145.
Tunç, Tuncay Et Al. "Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.14, no.2, 139-145, 2011
Tunç, Tuncay Et Al. "Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.14, no.2, pp.139-145, 2011
Tunç, T. Et Al. (2011) . "Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.14, no.2, pp.139-145.
@article{article, author={Tuncay Tunç Et Al. }, title={Temperature dependent current-voltage (I-V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, year=2011, pages={139-145} }