Yeriskin, S. Et Al. 2017. Temperature and voltage dependence of barrier height and ideality factor in Au/0.07 graphene-doped PVA/n-Si structures. INDIAN JOURNAL OF PHYSICS , no.4 , 421-430.

Yeriskin, S., Balbasi, M., & Demirezen, S., (2017). Temperature and voltage dependence of barrier height and ideality factor in Au/0.07 graphene-doped PVA/n-Si structures. INDIAN JOURNAL OF PHYSICS , no.4, 421-430.

Yeriskin, SEÇKİN, MUZAFFER BALBAŞI, And S. Demirezen. "Temperature and voltage dependence of barrier height and ideality factor in Au/0.07 graphene-doped PVA/n-Si structures," INDIAN JOURNAL OF PHYSICS , no.4, 421-430, 2017

Yeriskin, SEÇKİN A. Et Al. "Temperature and voltage dependence of barrier height and ideality factor in Au/0.07 graphene-doped PVA/n-Si structures." INDIAN JOURNAL OF PHYSICS , no.4, pp.421-430, 2017

Yeriskin, S. Balbasi, M. And Demirezen, S. (2017) . "Temperature and voltage dependence of barrier height and ideality factor in Au/0.07 graphene-doped PVA/n-Si structures." INDIAN JOURNAL OF PHYSICS , no.4, pp.421-430.

@article{article, author={SEÇKİN ALTINDAL YERİŞKİN Et Al. }, title={Temperature and voltage dependence of barrier height and ideality factor in Au/0.07 graphene-doped PVA/n-Si structures}, journal={INDIAN JOURNAL OF PHYSICS}, year=2017, pages={421-430} }