Tugluoglu, N. Et Al. 2004. Dielectric properties in Au/SnO2/n-Si (MOS) structures irradiated under Co-60-gamma rays. MICROELECTRONICS JOURNAL , vol.35, no.9 , 731-738.

Tugluoglu, N., Altindal, Ş., TATAROĞLU, A., & Karadeniz, S., (2004). Dielectric properties in Au/SnO2/n-Si (MOS) structures irradiated under Co-60-gamma rays. MICROELECTRONICS JOURNAL , vol.35, no.9, 731-738.

Tugluoglu, N Et Al. "Dielectric properties in Au/SnO2/n-Si (MOS) structures irradiated under Co-60-gamma rays," MICROELECTRONICS JOURNAL , vol.35, no.9, 731-738, 2004

Tugluoglu, N Et Al. "Dielectric properties in Au/SnO2/n-Si (MOS) structures irradiated under Co-60-gamma rays." MICROELECTRONICS JOURNAL , vol.35, no.9, pp.731-738, 2004

Tugluoglu, N. Et Al. (2004) . "Dielectric properties in Au/SnO2/n-Si (MOS) structures irradiated under Co-60-gamma rays." MICROELECTRONICS JOURNAL , vol.35, no.9, pp.731-738.

@article{article, author={N Tugluoglu Et Al. }, title={Dielectric properties in Au/SnO2/n-Si (MOS) structures irradiated under Co-60-gamma rays}, journal={MICROELECTRONICS JOURNAL}, year=2004, pages={731-738} }