Goekcen, M. Et Al. 2008. Temperature dependence of electrical characteristics of Au/SiO2/n-GaAS (MOS) structures. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.2, no.12 , 838-841.

Goekcen, M., Altuntas, H., & Altindal, Ş., (2008). Temperature dependence of electrical characteristics of Au/SiO2/n-GaAS (MOS) structures. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.2, no.12, 838-841.

Goekcen, M., H. Altuntas, And ŞEMSETTİN ALTINDAL. "Temperature dependence of electrical characteristics of Au/SiO2/n-GaAS (MOS) structures," OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.2, no.12, 838-841, 2008

Goekcen, M. Et Al. "Temperature dependence of electrical characteristics of Au/SiO2/n-GaAS (MOS) structures." OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.2, no.12, pp.838-841, 2008

Goekcen, M. Altuntas, H. And Altindal, Ş. (2008) . "Temperature dependence of electrical characteristics of Au/SiO2/n-GaAS (MOS) structures." OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS , vol.2, no.12, pp.838-841.

@article{article, author={M. Goekcen Et Al. }, title={Temperature dependence of electrical characteristics of Au/SiO2/n-GaAS (MOS) structures}, journal={OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS}, year=2008, pages={838-841} }