Ozturk, M. K. Et Al. 2014. Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.114, no.4 , 1215-1221.

Ozturk, M. K., Corekci, S., Tamer, M., Cetin, S. Ş., Ozcelik, S., & Ozbay, E., (2014). Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.114, no.4, 1215-1221.

Ozturk, M. Et Al. "Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD," APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.114, no.4, 1215-1221, 2014

Ozturk, M. K. Et Al. "Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD." APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.114, no.4, pp.1215-1221, 2014

Ozturk, M. K. Et Al. (2014) . "Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD." APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.114, no.4, pp.1215-1221.

@article{article, author={M. K. Ozturk Et Al. }, title={Microstructural properties of InGaN/GaN light-emitting diode structures with different In content grown by MOCVD}, journal={APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING}, year=2014, pages={1215-1221} }