Yucedag, I. Et Al. 2015. On the Anomalous Peak in the Forward Bias Capacitance and Dielectric Properties of the Al/Co-Doped (PVC plus TCNQ)/p-Si structures as Function of Temperature. JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS , vol.10, no.2 , 173-178.

Yucedag, I., Kaya, A., & Altindal, Ş., (2015). On the Anomalous Peak in the Forward Bias Capacitance and Dielectric Properties of the Al/Co-Doped (PVC plus TCNQ)/p-Si structures as Function of Temperature. JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS , vol.10, no.2, 173-178.

Yucedag, I., A. Kaya, And ŞEMSETTİN ALTINDAL. "On the Anomalous Peak in the Forward Bias Capacitance and Dielectric Properties of the Al/Co-Doped (PVC plus TCNQ)/p-Si structures as Function of Temperature," JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS , vol.10, no.2, 173-178, 2015

Yucedag, I. Et Al. "On the Anomalous Peak in the Forward Bias Capacitance and Dielectric Properties of the Al/Co-Doped (PVC plus TCNQ)/p-Si structures as Function of Temperature." JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS , vol.10, no.2, pp.173-178, 2015

Yucedag, I. Kaya, A. And Altindal, Ş. (2015) . "On the Anomalous Peak in the Forward Bias Capacitance and Dielectric Properties of the Al/Co-Doped (PVC plus TCNQ)/p-Si structures as Function of Temperature." JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS , vol.10, no.2, pp.173-178.

@article{article, author={I. Yucedag Et Al. }, title={On the Anomalous Peak in the Forward Bias Capacitance and Dielectric Properties of the Al/Co-Doped (PVC plus TCNQ)/p-Si structures as Function of Temperature}, journal={JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS}, year=2015, pages={173-178} }