Buyukbas-Ulusan, A. Et Al. 2018. Forward and reverse bias current-voltage (I-V) characteristics in the metal-ferroelectric-semiconductor (Au/SrTiO3/n-Si) structures at room temperature. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.29, no.19 , 16740-16746.

Buyukbas-Ulusan, A., Altindal-Yeriskin, S., & TATAROĞLU, A., (2018). Forward and reverse bias current-voltage (I-V) characteristics in the metal-ferroelectric-semiconductor (Au/SrTiO3/n-Si) structures at room temperature. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.29, no.19, 16740-16746.

Buyukbas-Ulusan, A., S. Altindal-Yeriskin, And ADEM TATAROĞLU. "Forward and reverse bias current-voltage (I-V) characteristics in the metal-ferroelectric-semiconductor (Au/SrTiO3/n-Si) structures at room temperature," JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.29, no.19, 16740-16746, 2018

Buyukbas-Ulusan, A. Et Al. "Forward and reverse bias current-voltage (I-V) characteristics in the metal-ferroelectric-semiconductor (Au/SrTiO3/n-Si) structures at room temperature." JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.29, no.19, pp.16740-16746, 2018

Buyukbas-Ulusan, A. Altindal-Yeriskin, S. And TATAROĞLU, A. (2018) . "Forward and reverse bias current-voltage (I-V) characteristics in the metal-ferroelectric-semiconductor (Au/SrTiO3/n-Si) structures at room temperature." JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.29, no.19, pp.16740-16746.

@article{article, author={A. Buyukbas-Ulusan Et Al. }, title={Forward and reverse bias current-voltage (I-V) characteristics in the metal-ferroelectric-semiconductor (Au/SrTiO3/n-Si) structures at room temperature}, journal={JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS}, year=2018, pages={16740-16746} }