Yildiz, D. E. And Altindal, Ş. 2011. A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.13 , 53-58.

Yildiz, D. E., & Altindal, Ş., (2011). A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.13, 53-58.

Yildiz, D., And ŞEMSETTİN ALTINDAL. "A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer," JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.13, 53-58, 2011

Yildiz, D. E. And Altindal, ŞEMSETTİN. "A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer." JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.13, pp.53-58, 2011

Yildiz, D. E. And Altindal, Ş. (2011) . "A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer." JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.13, pp.53-58.

@article{article, author={D. E. Yildiz And author={ŞEMSETTİN ALTINDAL}, title={A comparative study of the dielectric properties of Al/p-Si structures with 50 and 826 angstrom SiO2 interfacial layer}, journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, year=2011, pages={53-58} }