21.2mV/K High-Performance Ni<sub>(50nm)-</sub>Au<sub>(100nm)</sub>/Ga<sub>2</sub>O<sub>3</sub>/<italic>p</italic>-Si Vertical MOS type Diode and The Temperature Sensing Characteristics with A Novel Drive Mode
O. Cicek Et Al. , "21.2mV/K High-Performance Ni(50nm)-Au(100nm)/Ga2O3/p-Si Vertical MOS type Diode and The Temperature Sensing Characteristics with A Novel Drive Mode," IEEE Sensors Journal , vol.22, no.24, pp.23699-23704, 2022
Cicek, O. Et Al. 2022. 21.2mV/K High-Performance Ni(50nm)-Au(100nm)/Ga2O3/p-Si Vertical MOS type Diode and The Temperature Sensing Characteristics with A Novel Drive Mode. IEEE Sensors Journal , vol.22, no.24 , 23699-23704.
Cicek, O., Arslan, E., ALTINDAL, Ş., Badali, Y., & Ozbay, E., (2022). 21.2mV/K High-Performance Ni(50nm)-Au(100nm)/Ga2O3/p-Si Vertical MOS type Diode and The Temperature Sensing Characteristics with A Novel Drive Mode. IEEE Sensors Journal , vol.22, no.24, 23699-23704.
Cicek, Osman Et Al. "21.2mV/K High-Performance Ni(50nm)-Au(100nm)/Ga2O3/p-Si Vertical MOS type Diode and The Temperature Sensing Characteristics with A Novel Drive Mode," IEEE Sensors Journal , vol.22, no.24, 23699-23704, 2022
Cicek, Osman Et Al. "21.2mV/K High-Performance Ni(50nm)-Au(100nm)/Ga2O3/p-Si Vertical MOS type Diode and The Temperature Sensing Characteristics with A Novel Drive Mode." IEEE Sensors Journal , vol.22, no.24, pp.23699-23704, 2022
Cicek, O. Et Al. (2022) . "21.2mV/K High-Performance Ni(50nm)-Au(100nm)/Ga2O3/p-Si Vertical MOS type Diode and The Temperature Sensing Characteristics with A Novel Drive Mode." IEEE Sensors Journal , vol.22, no.24, pp.23699-23704.
@article{article, author={Osman Cicek Et Al. }, title={21.2mV/K High-Performance Ni(50nm)-Au(100nm)/Ga2O3/p-Si Vertical MOS type Diode and The Temperature Sensing Characteristics with A Novel Drive Mode}, journal={IEEE Sensors Journal}, year=2022, pages={23699-23704} }