Abbas, J. M. A. Et Al. 2017. A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures. JOURNAL OF ELECTRONIC MATERIALS , vol.46, no.8 , 5278-5286.

Abbas, J. M. A., Atmaca, G., NARİN, P., Kutlu, E., Sarikavak-Lisesivdin, B., & Lisesivdin, S. B., (2017). A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures. JOURNAL OF ELECTRONIC MATERIALS , vol.46, no.8, 5278-5286.

Abbas, J. Et Al. "A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures," JOURNAL OF ELECTRONIC MATERIALS , vol.46, no.8, 5278-5286, 2017

Abbas, J. M. Et Al. "A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures." JOURNAL OF ELECTRONIC MATERIALS , vol.46, no.8, pp.5278-5286, 2017

Abbas, J. M. A. Et Al. (2017) . "A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures." JOURNAL OF ELECTRONIC MATERIALS , vol.46, no.8, pp.5278-5286.

@article{article, author={J. M. All Abbas Et Al. }, title={A Comparative Study of AlGaN and InGaN Back-Barriers in Ultrathin-Barrier AlN/GaN Heterostructures}, journal={JOURNAL OF ELECTRONIC MATERIALS}, year=2017, pages={5278-5286} }