H. Uslu Et Al. , "The interface states and series resistance effects on the forward and reverse bias I-V, C-V and G/omega-V characteristics of Al-TiW-Pd2Si/n-Si Schottky barrier diodes," JOURNAL OF ALLOYS AND COMPOUNDS , vol.503, no.1, pp.96-102, 2010
Uslu, H. Et Al. 2010. The interface states and series resistance effects on the forward and reverse bias I-V, C-V and G/omega-V characteristics of Al-TiW-Pd2Si/n-Si Schottky barrier diodes. JOURNAL OF ALLOYS AND COMPOUNDS , vol.503, no.1 , 96-102.
Uslu, H., Altindal, Ş., AYDEMİR, U., Dokme, İ., & Afandiyeva, I. M., (2010). The interface states and series resistance effects on the forward and reverse bias I-V, C-V and G/omega-V characteristics of Al-TiW-Pd2Si/n-Si Schottky barrier diodes. JOURNAL OF ALLOYS AND COMPOUNDS , vol.503, no.1, 96-102.
Uslu, H. Et Al. "The interface states and series resistance effects on the forward and reverse bias I-V, C-V and G/omega-V characteristics of Al-TiW-Pd2Si/n-Si Schottky barrier diodes," JOURNAL OF ALLOYS AND COMPOUNDS , vol.503, no.1, 96-102, 2010
Uslu, H. Et Al. "The interface states and series resistance effects on the forward and reverse bias I-V, C-V and G/omega-V characteristics of Al-TiW-Pd2Si/n-Si Schottky barrier diodes." JOURNAL OF ALLOYS AND COMPOUNDS , vol.503, no.1, pp.96-102, 2010
Uslu, H. Et Al. (2010) . "The interface states and series resistance effects on the forward and reverse bias I-V, C-V and G/omega-V characteristics of Al-TiW-Pd2Si/n-Si Schottky barrier diodes." JOURNAL OF ALLOYS AND COMPOUNDS , vol.503, no.1, pp.96-102.
@article{article, author={H. Uslu Et Al. }, title={The interface states and series resistance effects on the forward and reverse bias I-V, C-V and G/omega-V characteristics of Al-TiW-Pd2Si/n-Si Schottky barrier diodes}, journal={JOURNAL OF ALLOYS AND COMPOUNDS}, year=2010, pages={96-102} }