Bengi, S. And Bulbul, M. M. 2013. Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures. CURRENT APPLIED PHYSICS , vol.13, no.8 , 1819-1825.

Bengi, S., & Bulbul, M. M., (2013). Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures. CURRENT APPLIED PHYSICS , vol.13, no.8, 1819-1825.

Bengi, S., And MEHMET MAHİR BÜLBÜL. "Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures," CURRENT APPLIED PHYSICS , vol.13, no.8, 1819-1825, 2013

Bengi, S. And Bulbul, MEHMET M. . "Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures." CURRENT APPLIED PHYSICS , vol.13, no.8, pp.1819-1825, 2013

Bengi, S. And Bulbul, M. M. (2013) . "Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures." CURRENT APPLIED PHYSICS , vol.13, no.8, pp.1819-1825.

@article{article, author={S. Bengi And author={MEHMET MAHİR BÜLBÜL}, title={Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures}, journal={CURRENT APPLIED PHYSICS}, year=2013, pages={1819-1825} }