Dokme, İ. 2011. The analysis of I-V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height. MICROELECTRONICS RELIABILITY , vol.51, no.2 , 360-364.

Dokme, İ., (2011). The analysis of I-V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height. MICROELECTRONICS RELIABILITY , vol.51, no.2, 360-364.

Dokme, İLBİLGE. "The analysis of I-V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height," MICROELECTRONICS RELIABILITY , vol.51, no.2, 360-364, 2011

Dokme, İLBİLGE. "The analysis of I-V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height." MICROELECTRONICS RELIABILITY , vol.51, no.2, pp.360-364, 2011

Dokme, İ. (2011) . "The analysis of I-V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height." MICROELECTRONICS RELIABILITY , vol.51, no.2, pp.360-364.

@article{article, author={İLBİLGE DÖKME}, title={The analysis of I-V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height}, journal={MICROELECTRONICS RELIABILITY}, year=2011, pages={360-364} }