S. B. LİŞESİVDİN Et Al. , "Growth parameter investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall effect measurements," SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.23, no.9, 2008
LİŞESİVDİN, S. B. Et Al. 2008. Growth parameter investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall effect measurements. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.23, no.9 .
LİŞESİVDİN, S. B., Demirezen, S., Caliskan, M. D., Yildiz, A., Kasap, M., Ozcelik, S., ... Ozbay, E.(2008). Growth parameter investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall effect measurements. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.23, no.9.
LİŞESİVDİN, SEFER Et Al. "Growth parameter investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall effect measurements," SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.23, no.9, 2008
LİŞESİVDİN, SEFER B. Et Al. "Growth parameter investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall effect measurements." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.23, no.9, 2008
LİŞESİVDİN, S. B. Et Al. (2008) . "Growth parameter investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall effect measurements." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.23, no.9.
@article{article, author={SEFER BORA LİŞESİVDİN Et Al. }, title={Growth parameter investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall effect measurements}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, year=2008}