Yuksel, O. F. Et Al. 2008. Investigation of diode parameters using I-V and C-V characteristics of In/SiO(2)/p-Si (MIS) Schottky diodes. PHYSICA B-CONDENSED MATTER , vol.403, no.17 , 2690-2697.

Yuksel, O. F., Selcuk, A. B., & Ocak, S., (2008). Investigation of diode parameters using I-V and C-V characteristics of In/SiO(2)/p-Si (MIS) Schottky diodes. PHYSICA B-CONDENSED MATTER , vol.403, no.17, 2690-2697.

Yuksel, O., A. B. Selcuk, And SEMA BİLGE OCAK. "Investigation of diode parameters using I-V and C-V characteristics of In/SiO(2)/p-Si (MIS) Schottky diodes," PHYSICA B-CONDENSED MATTER , vol.403, no.17, 2690-2697, 2008

Yuksel, O. F. Et Al. "Investigation of diode parameters using I-V and C-V characteristics of In/SiO(2)/p-Si (MIS) Schottky diodes." PHYSICA B-CONDENSED MATTER , vol.403, no.17, pp.2690-2697, 2008

Yuksel, O. F. Selcuk, A. B. And Ocak, S. (2008) . "Investigation of diode parameters using I-V and C-V characteristics of In/SiO(2)/p-Si (MIS) Schottky diodes." PHYSICA B-CONDENSED MATTER , vol.403, no.17, pp.2690-2697.

@article{article, author={O. F. Yuksel Et Al. }, title={Investigation of diode parameters using I-V and C-V characteristics of In/SiO(2)/p-Si (MIS) Schottky diodes}, journal={PHYSICA B-CONDENSED MATTER}, year=2008, pages={2690-2697} }