ERBİLEN TANRIKULU, E. 2019. Investigation of the Voltage Dependent Surface States and Their Relaxation Time of the Al/CdZnO/p-Si (MIS) Structure Via Admittance Method. Journal of the Institute of Science and Technology , vol.9 , 1359-1366.

ERBİLEN TANRIKULU, E., (2019). Investigation of the Voltage Dependent Surface States and Their Relaxation Time of the Al/CdZnO/p-Si (MIS) Structure Via Admittance Method. Journal of the Institute of Science and Technology , vol.9, 1359-1366.

ERBİLEN TANRIKULU, ESRA. "Investigation of the Voltage Dependent Surface States and Their Relaxation Time of the Al/CdZnO/p-Si (MIS) Structure Via Admittance Method," Journal of the Institute of Science and Technology , vol.9, 1359-1366, 2019

ERBİLEN TANRIKULU, ESRA E. . "Investigation of the Voltage Dependent Surface States and Their Relaxation Time of the Al/CdZnO/p-Si (MIS) Structure Via Admittance Method." Journal of the Institute of Science and Technology , vol.9, pp.1359-1366, 2019

ERBİLEN TANRIKULU, E. (2019) . "Investigation of the Voltage Dependent Surface States and Their Relaxation Time of the Al/CdZnO/p-Si (MIS) Structure Via Admittance Method." Journal of the Institute of Science and Technology , vol.9, pp.1359-1366.

@article{article, author={ESRA ERBİLEN TANRIKULU}, title={Investigation of the Voltage Dependent Surface States and Their Relaxation Time of the Al/CdZnO/p-Si (MIS) Structure Via Admittance Method}, journal={Journal of the Institute of Science and Technology}, year=2019, pages={1359-1366} }