Ozdemir, S. Et Al. 2011. The forward bias current density-voltage-temperature (J-V-T) characteristics of Al-SiO2-pSi (MIS) Schottky diodes. INTERNATIONAL JOURNAL OF ELECTRONICS , vol.98, no.6 , 699-712.

Ozdemir, S., DÖKME, İ., & ALTINDAL, Ş., (2011). The forward bias current density-voltage-temperature (J-V-T) characteristics of Al-SiO2-pSi (MIS) Schottky diodes. INTERNATIONAL JOURNAL OF ELECTRONICS , vol.98, no.6, 699-712.

Ozdemir, Selahattin, İLBİLGE DÖKME, And ŞEMSETTİN ALTINDAL. "The forward bias current density-voltage-temperature (J-V-T) characteristics of Al-SiO2-pSi (MIS) Schottky diodes," INTERNATIONAL JOURNAL OF ELECTRONICS , vol.98, no.6, 699-712, 2011

Ozdemir, Selahattin Et Al. "The forward bias current density-voltage-temperature (J-V-T) characteristics of Al-SiO2-pSi (MIS) Schottky diodes." INTERNATIONAL JOURNAL OF ELECTRONICS , vol.98, no.6, pp.699-712, 2011

Ozdemir, S. DÖKME, İ. And ALTINDAL, Ş. (2011) . "The forward bias current density-voltage-temperature (J-V-T) characteristics of Al-SiO2-pSi (MIS) Schottky diodes." INTERNATIONAL JOURNAL OF ELECTRONICS , vol.98, no.6, pp.699-712.

@article{article, author={Selahattin Ozdemir Et Al. }, title={The forward bias current density-voltage-temperature (J-V-T) characteristics of Al-SiO2-pSi (MIS) Schottky diodes}, journal={INTERNATIONAL JOURNAL OF ELECTRONICS}, year=2011, pages={699-712} }