Dinçer, A. S. Et Al. 2023. Effect of Si-rich SiXNY multilayer passivation material on the DC electrical characteristics of AlGaN/GaN HEMTs. Journal of Materials Science: Materials in Electronics , vol.34, no.23 .

Dinçer, A. S., Haliloğlu, M. T., Toprak, A., ALTINDAL, Ş., & Özbay, E., (2023). Effect of Si-rich SiXNY multilayer passivation material on the DC electrical characteristics of AlGaN/GaN HEMTs. Journal of Materials Science: Materials in Electronics , vol.34, no.23.

Dinçer, Ahmet Et Al. "Effect of Si-rich SiXNY multilayer passivation material on the DC electrical characteristics of AlGaN/GaN HEMTs," Journal of Materials Science: Materials in Electronics , vol.34, no.23, 2023

Dinçer, Ahmet S. Et Al. "Effect of Si-rich SiXNY multilayer passivation material on the DC electrical characteristics of AlGaN/GaN HEMTs." Journal of Materials Science: Materials in Electronics , vol.34, no.23, 2023

Dinçer, A. S. Et Al. (2023) . "Effect of Si-rich SiXNY multilayer passivation material on the DC electrical characteristics of AlGaN/GaN HEMTs." Journal of Materials Science: Materials in Electronics , vol.34, no.23.

@article{article, author={Ahmet Serhat Dinçer Et Al. }, title={Effect of Si-rich SiXNY multilayer passivation material on the DC electrical characteristics of AlGaN/GaN HEMTs}, journal={Journal of Materials Science: Materials in Electronics}, year=2023}