Bengi, S. And BÜLBÜL, M. M. 2014. Annealing effect on the electrical properties of HfO2 based Schottky barrier diodes. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.16 , 451-456.

Bengi, S., & BÜLBÜL, M. M., (2014). Annealing effect on the electrical properties of HfO2 based Schottky barrier diodes. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.16, 451-456.

Bengi, Seda, And MEHMET MAHİR BÜLBÜL. "Annealing effect on the electrical properties of HfO2 based Schottky barrier diodes," JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.16, 451-456, 2014

Bengi, Seda And BÜLBÜL, MEHMET M. . "Annealing effect on the electrical properties of HfO2 based Schottky barrier diodes." JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.16, pp.451-456, 2014

Bengi, S. And BÜLBÜL, M. M. (2014) . "Annealing effect on the electrical properties of HfO2 based Schottky barrier diodes." JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.16, pp.451-456.

@article{article, author={Seda Bengi And author={MEHMET MAHİR BÜLBÜL}, title={Annealing effect on the electrical properties of HfO2 based Schottky barrier diodes}, journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, year=2014, pages={451-456} }