M. Yildirim Et Al. , "On the profile of temperature and voltage dependence of interface states and resistivity in Au/n-Si structure with 79 angstrom insulator layer thickness," JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.13, pp.98-105, 2011
Yildirim, M. Et Al. 2011. On the profile of temperature and voltage dependence of interface states and resistivity in Au/n-Si structure with 79 angstrom insulator layer thickness. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.13 , 98-105.
Yildirim, M., Eroglu, A., Altindal, Ş., & Durmus, P., (2011). On the profile of temperature and voltage dependence of interface states and resistivity in Au/n-Si structure with 79 angstrom insulator layer thickness. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.13, 98-105.
Yildirim, M. Et Al. "On the profile of temperature and voltage dependence of interface states and resistivity in Au/n-Si structure with 79 angstrom insulator layer thickness," JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.13, 98-105, 2011
Yildirim, M. Et Al. "On the profile of temperature and voltage dependence of interface states and resistivity in Au/n-Si structure with 79 angstrom insulator layer thickness." JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.13, pp.98-105, 2011
Yildirim, M. Et Al. (2011) . "On the profile of temperature and voltage dependence of interface states and resistivity in Au/n-Si structure with 79 angstrom insulator layer thickness." JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.13, pp.98-105.
@article{article, author={M. Yildirim Et Al. }, title={On the profile of temperature and voltage dependence of interface states and resistivity in Au/n-Si structure with 79 angstrom insulator layer thickness}, journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, year=2011, pages={98-105} }