Kelekci, O. Et Al. 2012. Electron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , vol.209, no.3 , 434-438.

Kelekci, O., Tasli, P. T., Yu, H., KASAP, M., ÖZÇELİK, S., & ÖZBAY, E., (2012). Electron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , vol.209, no.3, 434-438.

Kelekci, Ozgur Et Al. "Electron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD," PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , vol.209, no.3, 434-438, 2012

Kelekci, Ozgur Et Al. "Electron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD." PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , vol.209, no.3, pp.434-438, 2012

Kelekci, O. Et Al. (2012) . "Electron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD." PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE , vol.209, no.3, pp.434-438.

@article{article, author={Ozgur Kelekci Et Al. }, title={Electron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD}, journal={PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE}, year=2012, pages={434-438} }