Baran, H. M. And TATAROĞLU, A. 2013. Determination of interface states and their time constant for Au/SnO2/n-Si (MOS) capacitors using admittance measurements. CHINESE PHYSICS B , vol.22, no.4 .

Baran, H. M., & TATAROĞLU, A., (2013). Determination of interface states and their time constant for Au/SnO2/n-Si (MOS) capacitors using admittance measurements. CHINESE PHYSICS B , vol.22, no.4.

Baran, H., And ADEM TATAROĞLU. "Determination of interface states and their time constant for Au/SnO2/n-Si (MOS) capacitors using admittance measurements," CHINESE PHYSICS B , vol.22, no.4, 2013

Baran, H. M. And TATAROĞLU, ADEM. "Determination of interface states and their time constant for Au/SnO2/n-Si (MOS) capacitors using admittance measurements." CHINESE PHYSICS B , vol.22, no.4, 2013

Baran, H. M. And TATAROĞLU, A. (2013) . "Determination of interface states and their time constant for Au/SnO2/n-Si (MOS) capacitors using admittance measurements." CHINESE PHYSICS B , vol.22, no.4.

@article{article, author={H. M. Baran And author={ADEM TATAROĞLU}, title={Determination of interface states and their time constant for Au/SnO2/n-Si (MOS) capacitors using admittance measurements}, journal={CHINESE PHYSICS B}, year=2013}