Dokme, İ. And Altindal, Ş. 2006. On the intersecting behaviour of experimental forward bias current-voltage (I-V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.21, no.8 , 1053-1058.

Dokme, İ., & Altindal, Ş., (2006). On the intersecting behaviour of experimental forward bias current-voltage (I-V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures. SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.21, no.8, 1053-1058.

Dokme, İLBİLGE, And ŞEMSETTİN ALTINDAL. "On the intersecting behaviour of experimental forward bias current-voltage (I-V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures," SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.21, no.8, 1053-1058, 2006

Dokme, İLBİLGE And Altindal, ŞEMSETTİN. "On the intersecting behaviour of experimental forward bias current-voltage (I-V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.21, no.8, pp.1053-1058, 2006

Dokme, İ. And Altindal, Ş. (2006) . "On the intersecting behaviour of experimental forward bias current-voltage (I-V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures." SEMICONDUCTOR SCIENCE AND TECHNOLOGY , vol.21, no.8, pp.1053-1058.

@article{article, author={İLBİLGE DÖKME And author={ŞEMSETTİN ALTINDAL}, title={On the intersecting behaviour of experimental forward bias current-voltage (I-V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures}, journal={SEMICONDUCTOR SCIENCE AND TECHNOLOGY}, year=2006, pages={1053-1058} }