S. B. LİŞESİVDİN Et Al. , "Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AlN/GaN/AlN heterostructures with a low indium content (0.064 <= x <= 0.140) barrier," THIN SOLID FILMS , vol.518, no.19, pp.5572-5575, 2010
LİŞESİVDİN, S. B. Et Al. 2010. Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AlN/GaN/AlN heterostructures with a low indium content (0.064 <= x <= 0.140) barrier. THIN SOLID FILMS , vol.518, no.19 , 5572-5575.
LİŞESİVDİN, S. B., Tasli, P., Kasap, M., Ozturk, M., Arslan, E., Ozcelik, S., ... Ozbay, E.(2010). Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AlN/GaN/AlN heterostructures with a low indium content (0.064 <= x <= 0.140) barrier. THIN SOLID FILMS , vol.518, no.19, 5572-5575.
LİŞESİVDİN, SEFER Et Al. "Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AlN/GaN/AlN heterostructures with a low indium content (0.064 <= x <= 0.140) barrier," THIN SOLID FILMS , vol.518, no.19, 5572-5575, 2010
LİŞESİVDİN, SEFER B. Et Al. "Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AlN/GaN/AlN heterostructures with a low indium content (0.064 <= x <= 0.140) barrier." THIN SOLID FILMS , vol.518, no.19, pp.5572-5575, 2010
LİŞESİVDİN, S. B. Et Al. (2010) . "Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AlN/GaN/AlN heterostructures with a low indium content (0.064 <= x <= 0.140) barrier." THIN SOLID FILMS , vol.518, no.19, pp.5572-5575.
@article{article, author={SEFER BORA LİŞESİVDİN Et Al. }, title={Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AlN/GaN/AlN heterostructures with a low indium content (0.064 <= x <= 0.140) barrier}, journal={THIN SOLID FILMS}, year=2010, pages={5572-5575} }