Akpinar, O. Et Al. 2020. Electron transport properties of Al0.3Ga0.7 N/GaN high electron mobility transistor (HEMT). APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.126, no.8 .

Akpinar, O., Bilgili, A. K., Ozturk, M., & Ozcelik, S., (2020). Electron transport properties of Al0.3Ga0.7 N/GaN high electron mobility transistor (HEMT). APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.126, no.8.

Akpinar, Omer Et Al. "Electron transport properties of Al0.3Ga0.7 N/GaN high electron mobility transistor (HEMT)," APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.126, no.8, 2020

Akpinar, Omer Et Al. "Electron transport properties of Al0.3Ga0.7 N/GaN high electron mobility transistor (HEMT)." APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.126, no.8, 2020

Akpinar, O. Et Al. (2020) . "Electron transport properties of Al0.3Ga0.7 N/GaN high electron mobility transistor (HEMT)." APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.126, no.8.

@article{article, author={Omer Akpinar Et Al. }, title={Electron transport properties of Al0.3Ga0.7 N/GaN high electron mobility transistor (HEMT)}, journal={APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING}, year=2020}