S. Altindal Et Al. , "Investigation of interface states in Al/SiO2/p-Si (MIS) structures with 50 and 826 angstrom SiO2 interfacial layer using admittance spectroscopy method," JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.14, pp.998-1004, 2012
Altindal, S. Et Al. 2012. Investigation of interface states in Al/SiO2/p-Si (MIS) structures with 50 and 826 angstrom SiO2 interfacial layer using admittance spectroscopy method. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.14 , 998-1004.
Altindal, S., Asar, Y., Kaya, A., & Sonmez, Z., (2012). Investigation of interface states in Al/SiO2/p-Si (MIS) structures with 50 and 826 angstrom SiO2 interfacial layer using admittance spectroscopy method. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.14, 998-1004.
Altindal, S. Et Al. "Investigation of interface states in Al/SiO2/p-Si (MIS) structures with 50 and 826 angstrom SiO2 interfacial layer using admittance spectroscopy method," JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.14, 998-1004, 2012
Altindal, S. Et Al. "Investigation of interface states in Al/SiO2/p-Si (MIS) structures with 50 and 826 angstrom SiO2 interfacial layer using admittance spectroscopy method." JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.14, pp.998-1004, 2012
Altindal, S. Et Al. (2012) . "Investigation of interface states in Al/SiO2/p-Si (MIS) structures with 50 and 826 angstrom SiO2 interfacial layer using admittance spectroscopy method." JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS , vol.14, pp.998-1004.
@article{article, author={S. Altindal Et Al. }, title={Investigation of interface states in Al/SiO2/p-Si (MIS) structures with 50 and 826 angstrom SiO2 interfacial layer using admittance spectroscopy method}, journal={JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS}, year=2012, pages={998-1004} }