Atmaca, G. Et Al. 2016. Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer. SOLID-STATE ELECTRONICS , vol.118 , 12-17.

Atmaca, G., Ardali, S., Tiras, E., Malin, T., Mansurov, V. G., Zhuravlev, K. S., ... LİŞESİVDİN, S. B.(2016). Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer. SOLID-STATE ELECTRONICS , vol.118, 12-17.

Atmaca, G. Et Al. "Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer," SOLID-STATE ELECTRONICS , vol.118, 12-17, 2016

Atmaca, G. Et Al. "Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer." SOLID-STATE ELECTRONICS , vol.118, pp.12-17, 2016

Atmaca, G. Et Al. (2016) . "Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer." SOLID-STATE ELECTRONICS , vol.118, pp.12-17.

@article{article, author={G. Atmaca Et Al. }, title={Scattering analysis of 2DEG mobility in undoped and doped AlGaN/AlN/GaN heterostructures with an in situ Si3N4 passivation layer}, journal={SOLID-STATE ELECTRONICS}, year=2016, pages={12-17} }