Bilgili, A. K. Et Al. 2018. Structural properties of InGaN/GaN/Al2O3 structure from reciprocal space mapping. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.29, no.14 , 12373-12380.

Bilgili, A. K., Akpinar, O., Kurtulus, G., Ozturk, M. K., ÖZÇELİK, S., & ÖZBAY, E., (2018). Structural properties of InGaN/GaN/Al2O3 structure from reciprocal space mapping. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.29, no.14, 12373-12380.

Bilgili, A. Et Al. "Structural properties of InGaN/GaN/Al2O3 structure from reciprocal space mapping," JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.29, no.14, 12373-12380, 2018

Bilgili, A. K. Et Al. "Structural properties of InGaN/GaN/Al2O3 structure from reciprocal space mapping." JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.29, no.14, pp.12373-12380, 2018

Bilgili, A. K. Et Al. (2018) . "Structural properties of InGaN/GaN/Al2O3 structure from reciprocal space mapping." JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.29, no.14, pp.12373-12380.

@article{article, author={A. Kursat Bilgili Et Al. }, title={Structural properties of InGaN/GaN/Al2O3 structure from reciprocal space mapping}, journal={JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS}, year=2018, pages={12373-12380} }