KINACI, B. Et Al. 2012. The temperature dependent analysis of Au/TiO2 (rutile)/n-Si (MIS) SBDs using current-voltage-temperature (I-V-T) characteristics. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.15, no.5 , 531-535.

KINACI, B., Cetin, S. Ş., Bengi, A., & ÖZÇELİK, S., (2012). The temperature dependent analysis of Au/TiO2 (rutile)/n-Si (MIS) SBDs using current-voltage-temperature (I-V-T) characteristics. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.15, no.5, 531-535.

KINACI, BARIŞ Et Al. "The temperature dependent analysis of Au/TiO2 (rutile)/n-Si (MIS) SBDs using current-voltage-temperature (I-V-T) characteristics," MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.15, no.5, 531-535, 2012

KINACI, BARIŞ Et Al. "The temperature dependent analysis of Au/TiO2 (rutile)/n-Si (MIS) SBDs using current-voltage-temperature (I-V-T) characteristics." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.15, no.5, pp.531-535, 2012

KINACI, B. Et Al. (2012) . "The temperature dependent analysis of Au/TiO2 (rutile)/n-Si (MIS) SBDs using current-voltage-temperature (I-V-T) characteristics." MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , vol.15, no.5, pp.531-535.

@article{article, author={BARIŞ KINACI Et Al. }, title={The temperature dependent analysis of Au/TiO2 (rutile)/n-Si (MIS) SBDs using current-voltage-temperature (I-V-T) characteristics}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, year=2012, pages={531-535} }