Guclu, C. S. Et Al. 2016. Double exponential I-V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)type Schottky barrier diodes in wide temperature range. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.122, no.12 .

Guclu, C. S., ÖZDEMİR, A. F., & ALTINDAL, Ş., (2016). Double exponential I-V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)type Schottky barrier diodes in wide temperature range. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.122, no.12.

Guclu, Cigdem, Ahmet Faruk ÖZDEMİR, And ŞEMSETTİN ALTINDAL. "Double exponential I-V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)type Schottky barrier diodes in wide temperature range," APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.122, no.12, 2016

Guclu, Cigdem S. Et Al. "Double exponential I-V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)type Schottky barrier diodes in wide temperature range." APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.122, no.12, 2016

Guclu, C. S. ÖZDEMİR, A. F. And ALTINDAL, Ş. (2016) . "Double exponential I-V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)type Schottky barrier diodes in wide temperature range." APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , vol.122, no.12.

@article{article, author={Cigdem S. Guclu Et Al. }, title={Double exponential I-V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)type Schottky barrier diodes in wide temperature range}, journal={APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING}, year=2016}