C. S. Guclu Et Al. , "The reverse bias current-voltage-temperature (I-V-T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80-380 K," JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.32, no.5, pp.5624-5634, 2021
Guclu, C. S. Et Al. 2021. The reverse bias current-voltage-temperature (I-V-T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80-380 K. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.32, no.5 , 5624-5634.
Guclu, C. S., Ozdemir, A. F., Aldemir, D. A., & ALTINDAL, Ş., (2021). The reverse bias current-voltage-temperature (I-V-T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80-380 K. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.32, no.5, 5624-5634.
Guclu, C. Et Al. "The reverse bias current-voltage-temperature (I-V-T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80-380 K," JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.32, no.5, 5624-5634, 2021
Guclu, C. S. Et Al. "The reverse bias current-voltage-temperature (I-V-T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80-380 K." JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.32, no.5, pp.5624-5634, 2021
Guclu, C. S. Et Al. (2021) . "The reverse bias current-voltage-temperature (I-V-T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80-380 K." JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.32, no.5, pp.5624-5634.
@article{article, author={C. S. Guclu Et Al. }, title={The reverse bias current-voltage-temperature (I-V-T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80-380 K}, journal={JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS}, year=2021, pages={5624-5634} }