ALPTEKİN, S. And ALTINDAL, Ş. 2020. Electrical characteristics of Au/PVP/n-Si structures using admittance measurements between 1 and 500 kHz. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.31, no.16 , 13337-13343.

ALPTEKİN, S., & ALTINDAL, Ş., (2020). Electrical characteristics of Au/PVP/n-Si structures using admittance measurements between 1 and 500 kHz. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.31, no.16, 13337-13343.

ALPTEKİN, SEBAHADDİN, And ŞEMSETTİN ALTINDAL. "Electrical characteristics of Au/PVP/n-Si structures using admittance measurements between 1 and 500 kHz," JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.31, no.16, 13337-13343, 2020

ALPTEKİN, SEBAHADDİN And ALTINDAL, ŞEMSETTİN. "Electrical characteristics of Au/PVP/n-Si structures using admittance measurements between 1 and 500 kHz." JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.31, no.16, pp.13337-13343, 2020

ALPTEKİN, S. And ALTINDAL, Ş. (2020) . "Electrical characteristics of Au/PVP/n-Si structures using admittance measurements between 1 and 500 kHz." JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , vol.31, no.16, pp.13337-13343.

@article{article, author={SEBAHADDİN ALPTEKİN And author={ŞEMSETTİN ALTINDAL}, title={Electrical characteristics of Au/PVP/n-Si structures using admittance measurements between 1 and 500 kHz}, journal={JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS}, year=2020, pages={13337-13343} }